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APTM100A23STG
Phase leg Series & parallel diodes MOSFET Power Module
NTC2 V BUS Q1
VDSS = 1000V RDSon = 230m typ @ Tj = 25C ID = 36A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
G1 OUT S1 Q2
G2
0/VBUS S2 NTC1
OUT VBUS OUT
0/VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-7
APTM100A23STG - Rev 3
mJ
July, 2006
Tc = 25C
Max ratings 1000 36 27 144 30 270 694 18 50 2500
Unit V A V m W A
APTM100A23STG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 18A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 36A Inductive switching @ 125C VGS = 15V VBus = 667V ID = 36A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5
230 3
Max 200 1000 270 5 150 Max
Unit A m V nA Unit pF
Dynamic Characteristics
Min
Typ 8700 1430 240 308 52 194 10 12 121 35 1278 760 2092 902
nC
ns
J
J
Series diode ratings and characteristics
Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s VR=200V Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 350 600
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 24 48 66 300
1.15 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
July, 2006 2-7 APTM100A23STG - Rev 3
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APTM100A23STG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V di/dt = 400A/s Test Conditions VR=1000V Tj = 25C Tj = 125C Tc = 65C Min 1000 Typ Max 350 600 60 1.9 2.2 1.7 290 390 1340 4700 Min Transistor Diode 2500 -40 -40 -40 2.5 Typ Max 0.18 0.65 150 125 100 4.7 160 Typ 50 3952 Max 2.3 V Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
Unit C/W V C N.m g Unit k K
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
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3-7
APTM100A23STG - Rev 3
July, 2006
APTM100A23STG
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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4-7
APTM100A23STG - Rev 3
July, 2006
APTM100A23STG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.7 0.14 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 I D, Drain Current (A) ID, Drain Current (A) 100 80 60 40 20 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 18A VGS=10V 5.5V 5V V GS=15&8V 7V 6.5V 6V
Thermal Impedance (C/W)
10
Transfert Characteristics 160 140 120 100 80 60 40 20 0 30 0 1 2 3 4 5 6
T J=25C TJ=125C T J=-55C
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7
8
9 10
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150
July, 2006 5-7 APTM100A23STG - Rev 3
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS =20V
20
40
60
80
100
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100A23STG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 100 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=18A
1000
100s
100
limited by RDSon 1ms
10
Single pulse TJ=150C TC=25C
10ms
1 1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=36A TJ=25C
VDS=200V V DS =500V VDS=800V
10000
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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6-7
APTM100A23STG - Rev 3
APTM100A23STG
Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Current t d(on) 10 0 10 20 30 40 50 60 I D, Drain Current (A) 70 80
V DS=667V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 60
VDS=667V RG=2.5 TJ=125C L=100H
td(off) tr and tf (ns)
50 40 30 20
tf
tr
Switching Energy vs Gate Resistance
4
Switching Energy (mJ) Switching Energy (mJ)
5
V DS =667V RG =2.5 T J=125C L=100H
Eon
3 2 1 0 10
4 3 2 1 0
V DS =667V ID=36A T J=125C L=100H
Eoff
Eon
Eoff
Eoff
20
30
40
50
60
70
80
0
3
5
8
10
13
15
ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=667V D=50% RG=2.5 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A)
300 250
Frequency (kHz)
1000
200 150 100 50 0 14 18
Hard switching ZCS
ZVS
100
TJ=150C T J=25C
10
22 26 30 ID, Drain Current (A)
34
1 0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2006 7-7 APTM100A23STG - Rev 3
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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